FGH40T100SMD
onsemi
onsemi
IGBT 1000V 80A 333W TO247-3
$0.00
Available to order
Reference Price (USD)
1+
$5.51000
10+
$4.97100
450+
$3.90240
900+
$3.51936
1,350+
$2.99520
Exquisite packaging
Discount
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Optimize your power systems with the FGH40T100SMD Single IGBT transistor from onsemi. This Discrete Semiconductor Product is engineered for precision and efficiency, offering superior thermal performance and low EMI characteristics. Ideal for applications like electric vehicle charging stations, renewable energy systems, and industrial automation, the FGH40T100SMD delivers consistent and reliable operation. Trust onsemi's expertise in semiconductor technology to enhance your power management solutions with this high-quality IGBT.
Specifications
- Product Status: Obsolete
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1000 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
- Power - Max: 333 W
- Switching Energy: 2.35mJ (on), 1.15mJ (off)
- Input Type: Standard
- Gate Charge: 265 nC
- Td (on/off) @ 25°C: 29ns/285ns
- Test Condition: 600V, 40A, 10Ohm, 15V
- Reverse Recovery Time (trr): 78 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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