IHD06N60RA
Infineon Technologies
Infineon Technologies
IGBT 600V 12A 88W TO252-3
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The IHD06N60RA Single IGBT transistor by Infineon Technologies is a high-performance component in the Discrete Semiconductor Products category. Featuring low switching losses and high reliability, it is perfect for demanding applications like medical imaging, defense systems, and data centers. The IHD06N60RA ensures precise power control and long-term stability. With Infineon Technologies's reputation for excellence, this IGBT is a trusted choice for engineers worldwide. Incorporate IHD06N60RA into your projects for superior results.
Specifications
- Product Status: Obsolete
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 12 A
- Current - Collector Pulsed (Icm): 18 A
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 6A
- Power - Max: 88 W
- Switching Energy: 150µJ
- Input Type: Standard
- Gate Charge: 42 nC
- Td (on/off) @ 25°C: 25ns/125ns
- Test Condition: 400V, 6A, 14.7Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: PG-TO252-3-11
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