IRGR2B60KDTRRPBF
Infineon Technologies

Infineon Technologies
IGBT NPT 600V 6.3A DPAK
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Reference Price (USD)
3,000+
$1.05966
Exquisite packaging
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Optimize your power systems with the IRGR2B60KDTRRPBF Single IGBT transistor from Infineon Technologies. This Discrete Semiconductor Product is engineered for precision and efficiency, offering superior thermal performance and low EMI characteristics. Ideal for applications like electric vehicle charging stations, renewable energy systems, and industrial automation, the IRGR2B60KDTRRPBF delivers consistent and reliable operation. Trust Infineon Technologies's expertise in semiconductor technology to enhance your power management solutions with this high-quality IGBT.
Specifications
- Product Status: Obsolete
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 6.3 A
- Current - Collector Pulsed (Icm): 8 A
- Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 2A
- Power - Max: 35 W
- Switching Energy: 74µJ (on), 39µJ (off)
- Input Type: Standard
- Gate Charge: 12 nC
- Td (on/off) @ 25°C: 11ns/150ns
- Test Condition: 400V, 2A, 100Ohm, 15V
- Reverse Recovery Time (trr): 68 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: D-Pak