FMS6G10US60S
onsemi
onsemi
IGBT MODULE 600V 10A 66W 25PMAA
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Engineered for excellence, the FMS6G10US60S IGBT module by onsemi sets new standards in the Discrete Semiconductor Products market. This power transistor module combines high current density with excellent thermal cycling capability. Its standout features include positive temperature coefficient for easy paralleling and built-in temperature monitoring. The FMS6G10US60S finds perfect application in electric vehicle charging stations, wind turbine converters, and robotic automation systems. For instance, this module excels in high-power SMPS designs requiring >100kHz switching frequencies. onsemi continues to lead the IGBT module revolution with innovations like the FMS6G10US60S.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 10 A
- Power - Max: 66 W
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 10A
- Current - Collector Cutoff (Max): 250 µA
- Input Capacitance (Cies) @ Vce: 710 pF @ 30 V
- Input: Single Phase Bridge Rectifier
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: 25PM-AA
- Supplier Device Package: 25PM-AA
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