FP150R12KT4BPSA1
Infineon Technologies
Infineon Technologies
IGBT MODULE 1200V 150A
$386.52
Available to order
Reference Price (USD)
1+
$243.50000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Infineon Technologies's FP150R12KT4BPSA1 sets the benchmark for IGBT modules in the Transistors - IGBTs - Modules sector. This discrete semiconductor product features revolutionary reverse-conducting technology and dual-side cooling capability. The module's competitive advantages include: 50% higher power cycling capability, RoHS-compliant materials, and vibration-resistant construction. It's ideally suited for hybrid electric vehicles, smart grid applications, and high-power RF amplifiers. Implement the FP150R12KT4BPSA1 in your traction inverters or high-energy physics experiments for unparalleled performance. Trust Infineon Technologies to deliver cutting-edge IGBT solutions with the FP150R12KT4BPSA1 power module.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 150 A
- Power - Max: -
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 150A
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 9.35 nF @ 25 V
- Input: Three Phase Bridge Rectifier
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
Related Products
Infineon Technologies
FZ400R12KS4HOSA1
Microchip Technology
APTCV60HM45RT3G
IXYS
IXYN82N120C3
Infineon Technologies
FS75R12KT3GBOSA1
Infineon Technologies
FD16001200R17HP4KB2BOSA1
Infineon Technologies
FZ250R65KE3NPSA1
Infineon Technologies
FF900R12IE4VBOSA1
IXYS
IXXN110N65C4H1
Infineon Technologies
IM240M6Z1BALMA1
Infineon Technologies