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FQP2N90

onsemi
FQP2N90 Preview
onsemi
MOSFET N-CH 900V 2.2A TO220-3
$1.71
Available to order
Reference Price (USD)
1+
$1.64000
10+
$1.44900
100+
$1.14540
500+
$0.88826
1,000+
$0.70125
Exquisite packaging
Discount
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Specifications

  • Product Status: Last Time Buy
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 900 V
  • Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 7.2Ohm @ 1.1A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 85W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3

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