FP35R12N2T7B11BPSA2
Infineon Technologies
Infineon Technologies
LOW POWER ECONO
$120.68
Available to order
Reference Price (USD)
1+
$120.68000
500+
$119.4732
1000+
$118.2664
1500+
$117.0596
2000+
$115.8528
2500+
$114.646
Exquisite packaging
Discount
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Discover the power of Infineon Technologies's FP35R12N2T7B11BPSA2, a premium IGBT module in the Transistors - IGBTs - Modules classification. This discrete semiconductor solution offers ultra-low conduction losses and avalanche ruggedness for harsh environments. The module's unique selling points include: VCE(sat) negative temperature coefficient, aluminum nitride substrate, and press-pack technology. Major application sectors include rail transportation, marine propulsion, and aerospace power systems. The FP35R12N2T7B11BPSA2 performs exceptionally well in high-voltage DC transmission and pulsed power applications. With Infineon Technologies's FP35R12N2T7B11BPSA2, you get unmatched reliability in power electronics designs.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 35 A
- Power - Max: 20 mW
- Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 35A
- Current - Collector Cutoff (Max): 7 µA
- Input Capacitance (Cies) @ Vce: 6.62 nF @ 25 V
- Input: Three Phase Bridge Rectifier
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-ECONO2B
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