FF600R12ME7B11BPSA2
Infineon Technologies
Infineon Technologies
MEDIUM POWER ECONO AG-ECONOD-741
$335.62
Available to order
Reference Price (USD)
1+
$335.62000
500+
$332.2638
1000+
$328.9076
1500+
$325.5514
2000+
$322.1952
2500+
$318.839
Exquisite packaging
Discount
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Infineon Technologies's FF600R12ME7B11BPSA2 stands out in the Transistors - IGBTs - Modules category with its revolutionary RC-IGBT design. This discrete semiconductor product merges the advantages of IGBTs and diodes in a single chip for compact power solutions. The module boasts exceptional features like: 650V-1700V voltage range, solderless press-fit contacts, and humidity-resistant coating. It's particularly suited for photovoltaic inverters, uninterruptible power supplies, and medical imaging equipment. For example, the FF600R12ME7B11BPSA2 enables higher power density in MRI gradient amplifiers. Choose Infineon Technologies for IGBT modules that push performance boundaries.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: 2 Independent
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 600 A
- Power - Max: 20 mW
- Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 600A
- Current - Collector Cutoff (Max): 35 µA
- Input Capacitance (Cies) @ Vce: 92 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-ECONOD
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