FZ1200R33KF2CNOSA4
Infineon Technologies
Infineon Technologies
IGBT MODULE 3300V 2000A
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Engineered for excellence, the FZ1200R33KF2CNOSA4 IGBT module by Infineon Technologies sets new standards in the Discrete Semiconductor Products market. This power transistor module combines high current density with excellent thermal cycling capability. Its standout features include positive temperature coefficient for easy paralleling and built-in temperature monitoring. The FZ1200R33KF2CNOSA4 finds perfect application in electric vehicle charging stations, wind turbine converters, and robotic automation systems. For instance, this module excels in high-power SMPS designs requiring >100kHz switching frequencies. Infineon Technologies continues to lead the IGBT module revolution with innovations like the FZ1200R33KF2CNOSA4.
Specifications
- Product Status: Last Time Buy
- IGBT Type: -
- Configuration: Full Bridge
- Voltage - Collector Emitter Breakdown (Max): 3300 V
- Current - Collector (Ic) (Max): 2000 A
- Power - Max: 14500 W
- Vce(on) (Max) @ Vge, Ic: 4.25V @ 15V, 1.2kA
- Current - Collector Cutoff (Max): 12 mA
- Input Capacitance (Cies) @ Vce: 150 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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