FZ2400R17HE4B9NPSA1
Infineon Technologies
Infineon Technologies
INSULATED GATE BIPOLAR TRANSISTO
$893.07
Available to order
Reference Price (USD)
1+
$893.07000
500+
$884.1393
1000+
$875.2086
1500+
$866.2779
2000+
$857.3472
2500+
$848.4165
Exquisite packaging
Discount
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The FZ2400R17HE4B9NPSA1 by Infineon Technologies is a high-efficiency Single IGBT transistor, part of the esteemed Discrete Semiconductor Products line. With low on-state voltage and high-speed switching, it is ideal for energy-saving applications. Commonly used in electric vehicles, smart grids, and industrial machinery, the FZ2400R17HE4B9NPSA1 delivers robust performance. Infineon Technologies's commitment to quality ensures a product that meets the rigorous demands of modern electronics. Integrate FZ2400R17HE4B9NPSA1 into your designs for optimal power control.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: -
- Power - Max: -
- Switching Energy: -
- Input Type: -
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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