FZ800R33KL2CB5NOSA1
Infineon Technologies
Infineon Technologies
IGBT MOD 3300V 1500A 9800W
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The FZ800R33KL2CB5NOSA1 by Infineon Technologies redefines performance in the IGBT modules segment of Discrete Semiconductor Products. Featuring sixth-generation field-stop technology, this power transistor delivers optimal switching characteristics and short-circuit withstand capability. Key attributes include: 175 C maximum junction temperature, low EMI generation, and integrated current sensing. Industrial applications span from elevator drives and CNC machinery to large-scale HVAC systems. A practical implementation would be using the FZ800R33KL2CB5NOSA1 in high-efficiency servo controllers for manufacturing automation. Infineon Technologies combines innovation with quality in every FZ800R33KL2CB5NOSA1 module.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Configuration: -
- Voltage - Collector Emitter Breakdown (Max): 3300 V
- Current - Collector (Ic) (Max): 1500 A
- Power - Max: 9800 W
- Vce(on) (Max) @ Vge, Ic: 3.65V @ 15V, 800A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 97 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
Related Products
Microchip Technology
APTGF75DSK120TG
Infineon Technologies
FS400R12A2T4IBPSA1
Infineon Technologies
FS400R12A2T4BOSA1
Vishay General Semiconductor - Diodes Division
VS-GA200SA60UP
Powerex Inc.
CM300DY-12H
IXYS
IXSN35N120AU1
Littelfuse Inc.
MG1240H-XBN2MM
Vishay General Semiconductor - Diodes Division
VS-CPV362M4FPBF
Littelfuse Inc.
MG1225H-XN2MM
Microsemi Corporation