TP65H150G4LSG-TR
Transphorm
Transphorm
650 V 13 A GAN FET
$5.74
Available to order
Reference Price (USD)
1+
$5.74000
500+
$5.6826
1000+
$5.6252
1500+
$5.5678
2000+
$5.5104
2500+
$5.453
Exquisite packaging
Discount
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The TP65H150G4LSG-TR by Transphorm is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the TP65H150G4LSG-TR is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 180mOhm @ 8.5A, 10V
- Vgs(th) (Max) @ Id: 4.8V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 598 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 52W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 2-PQFN (8x8)
- Package / Case: 2-PowerTSFN
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