G3R75MT12J
GeneSiC Semiconductor
GeneSiC Semiconductor
SIC MOSFET N-CH 42A TO263-7
$11.69
Available to order
Reference Price (USD)
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$11.69000
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$11.5731
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$11.4562
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$11.3393
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$11.2224
2500+
$11.1055
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Discover the G3R75MT12J from GeneSiC Semiconductor, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the G3R75MT12J ensures reliable performance in demanding environments. Upgrade your circuit designs with GeneSiC Semiconductor's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
- Vgs(th) (Max) @ Id: 2.69V @ 7.5mA
- Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 15 V
- Vgs (Max): ±15V
- Input Capacitance (Ciss) (Max) @ Vds: 1560 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 224W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263-7
- Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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