PSMN1R2-25YL,115
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 25V 100A LFPAK56
$2.73
Available to order
Reference Price (USD)
1,500+
$0.64350
3,000+
$0.60060
7,500+
$0.57057
10,500+
$0.54912
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The PSMN1R2-25YL,115 by Nexperia USA Inc. is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the PSMN1R2-25YL,115 is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 1.2mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 2.15V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 6380 pF @ 12 V
- FET Feature: -
- Power Dissipation (Max): 121W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK56; Power-SO8
- Package / Case: SOT-1023, 4-LFPAK
Related Products
Renesas Electronics America Inc
RJL60S5DPP-E0#T2
Infineon Technologies
IPP100N06S2L05AKSA2
Vishay Siliconix
SIHP30N60AEL-GE3
Vishay Siliconix
SIHLL110TR-GE3
Renesas Electronics America Inc
2SK3457-AZ
NXP USA Inc.
PHD108NQ03LT,118
Texas Instruments
CSD25404Q3
onsemi
NTD4813NH-35G
Vishay Siliconix
IRLI520GPBF
Infineon Technologies