GPA020A120MN-FD
SemiQ
SemiQ
IGBT 1200V 40A 223W TO3PN
$0.00
Available to order
Reference Price (USD)
2,500+
$1.59600
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The GPA020A120MN-FD by SemiQ is a premium Single IGBT transistor designed for high-power applications. Part of the Discrete Semiconductor Products family, it features fast switching speeds and high input impedance, reducing power loss and improving efficiency. Commonly used in motor control, power supplies, and renewable energy inverters, this IGBT is built to withstand harsh environments. With SemiQ's reputation for quality, the GPA020A120MN-FD is a dependable choice for demanding electronic designs.
Specifications
- Product Status: Obsolete
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 40 A
- Current - Collector Pulsed (Icm): 60 A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
- Power - Max: 223 W
- Switching Energy: 2.8mJ (on), 480µJ (off)
- Input Type: Standard
- Gate Charge: 210 nC
- Td (on/off) @ 25°C: 30ns/150ns
- Test Condition: 600V, 20A, 10Ohm, 15V
- Reverse Recovery Time (trr): 425 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3PN
Related Products
Infineon Technologies
IRGP6660D-EPBF
SemiQ
GPA040A120MN-FD
IXYS
IXBH14N250A
Infineon Technologies
IHW20N120R3FKSA1
Infineon Technologies
IRG7PH42UD2-EP
Infineon Technologies
IRG7PH35UDPBF
IXYS
IXGA7N60C
Infineon Technologies
IRG4PH50KDPBF-INF
Infineon Technologies
IRGPS47160DPBF
Infineon Technologies