GPA060A060MN-FD
SemiQ
SemiQ
IGBT 600V 120A 347W TO3PN
$0.00
Available to order
Reference Price (USD)
2,500+
$2.66000
Exquisite packaging
Discount
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Upgrade your power management systems with the GPA060A060MN-FD Single IGBT transistor from SemiQ. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the GPA060A060MN-FD provides reliable and efficient operation. SemiQ's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose GPA060A060MN-FD for your critical power needs.
Specifications
- Product Status: Obsolete
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 120 A
- Current - Collector Pulsed (Icm): 180 A
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
- Power - Max: 347 W
- Switching Energy: 2.66mJ (on), 1.53mJ (off)
- Input Type: Standard
- Gate Charge: 225 nC
- Td (on/off) @ 25°C: 45ns/150ns
- Test Condition: 400V, 60A, 10Ohm, 15V
- Reverse Recovery Time (trr): 140 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3PN
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