GT40WR21,Q
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
DISCRETE IGBT TRANSISTOR TO-3PN(
$8.48
Available to order
Reference Price (USD)
1+
$8.48120
500+
$8.396388
1000+
$8.311576
1500+
$8.226764
2000+
$8.141952
2500+
$8.05714
Exquisite packaging
Discount
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Upgrade your power management systems with the GT40WR21,Q Single IGBT transistor from Toshiba Semiconductor and Storage. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the GT40WR21,Q provides reliable and efficient operation. Toshiba Semiconductor and Storage's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose GT40WR21,Q for your critical power needs.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: -
- Power - Max: -
- Switching Energy: -
- Input Type: -
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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