HGTA32N60E2
Harris Corporation
Harris Corporation
32A, 600V N-CHANNEL IGBT
$10.60
Available to order
Reference Price (USD)
1+
$10.60000
500+
$10.494
1000+
$10.388
1500+
$10.282
2000+
$10.176
2500+
$10.07
Exquisite packaging
Discount
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Optimize your power systems with the HGTA32N60E2 Single IGBT transistor from Harris Corporation. This Discrete Semiconductor Product is engineered for precision and efficiency, offering superior thermal performance and low EMI characteristics. Ideal for applications like electric vehicle charging stations, renewable energy systems, and industrial automation, the HGTA32N60E2 delivers consistent and reliable operation. Trust Harris Corporation's expertise in semiconductor technology to enhance your power management solutions with this high-quality IGBT.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 50 A
- Current - Collector Pulsed (Icm): 200 A
- Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 32A
- Power - Max: 208 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 265 nC
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-218-5
- Supplier Device Package: TO-218-5
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