RJH1BF7RDPQ-80#T2
Renesas
Renesas
RJH1BF7 - INSULATED GATE BIPOLAR
$5.75
Available to order
Reference Price (USD)
1+
$5.75115
500+
$5.6936385
1000+
$5.636127
1500+
$5.5786155
2000+
$5.521104
2500+
$5.4635925
Exquisite packaging
Discount
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The RJH1BF7RDPQ-80#T2 from Renesas is a high-performance Single IGBT transistor designed for robust and efficient power management in various applications. As part of the Discrete Semiconductor Products category, this IGBT offers low saturation voltage and fast switching capabilities, making it ideal for high-efficiency power conversion. Its advanced design ensures thermal stability and durability, even under demanding conditions. Common applications include motor drives, solar inverters, and industrial power supplies, where reliable and efficient switching is crucial. Choose RJH1BF7RDPQ-80#T2 for superior performance in your next power electronics project.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1100 V
- Current - Collector (Ic) (Max): 60 A
- Current - Collector Pulsed (Icm): 100 A
- Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 60A
- Power - Max: 250 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
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