HAT2172N-EL-E
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET N-CH 40V 30A 8LFPAK
$1.71
Available to order
Reference Price (USD)
1+
$1.71000
500+
$1.6929
1000+
$1.6758
1500+
$1.6587
2000+
$1.6416
2500+
$1.6245
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The HAT2172N-EL-E from Renesas Electronics America Inc redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the HAT2172N-EL-E offers the precision and reliability you need. Trust Renesas Electronics America Inc to power your next breakthrough innovation.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 7.8mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: 2420 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 20W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-LFPAK-iV
- Package / Case: 8-PowerSOIC (0.154", 3.90mm Width)
Related Products
Infineon Technologies
IPI072N10N3G
Infineon Technologies
ISC011N03L5SATMA1
Infineon Technologies
IRFHM9331TRPBF
Texas Instruments
CSD17579Q5A
Vishay Siliconix
IRFP23N50LPBF
Diodes Incorporated
DMN10H100SK3-13
Infineon Technologies
IPD80R2K8CEATMA1
Vishay Siliconix
SQJ186EP-T1_GE3
Infineon Technologies
IRF1010ESTRLPBF
Infineon Technologies