HAT2202C-EL-E
Renesas
Renesas
HAT2202C-EL-E - SILICON N CHANNE
$0.29
Available to order
Reference Price (USD)
1+
$0.28839
500+
$0.2855061
1000+
$0.2826222
1500+
$0.2797383
2000+
$0.2768544
2500+
$0.2739705
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The HAT2202C-EL-E from Renesas redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the HAT2202C-EL-E offers the precision and reliability you need. Trust Renesas to power your next breakthrough innovation.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 40mOhm @ 1.5A, 4.5V
- Vgs(th) (Max) @ Id: 1.4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 200mW
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: 6-CMFPAK
- Package / Case: 6-SMD, Flat Leads
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