HGT1S12N60C3D
Harris Corporation
Harris Corporation
24A, 600V, N-CHANNEL IGBT
$1.23
Available to order
Reference Price (USD)
1+
$1.23000
500+
$1.2177
1000+
$1.2054
1500+
$1.1931
2000+
$1.1808
2500+
$1.1685
Exquisite packaging
Discount
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Discover the HGT1S12N60C3D Single IGBT transistor by Harris Corporation, a standout in the Discrete Semiconductor Products lineup. This component excels in high-voltage and high-current applications, featuring low conduction losses and excellent switching performance. Perfect for use in welding equipment, UPS systems, and induction heating, the HGT1S12N60C3D ensures reliability and efficiency. Its rugged construction and advanced technology make it a top choice for engineers seeking durable and high-performing IGBTs. Upgrade your designs with the HGT1S12N60C3D for unmatched power control.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 24 A
- Current - Collector Pulsed (Icm): 96 A
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
- Power - Max: 104 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 62 nC
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): 40 ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
- Supplier Device Package: I2PAK (TO-262)
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