STGWA30HP65FB2
STMicroelectronics
STMicroelectronics
TRENCH GATE FIELD-STOP 650 V, 30
$3.09
Available to order
Reference Price (USD)
1+
$3.09000
500+
$3.0591
1000+
$3.0282
1500+
$2.9973
2000+
$2.9664
2500+
$2.9355
Exquisite packaging
Discount
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Upgrade your power management systems with the STGWA30HP65FB2 Single IGBT transistor from STMicroelectronics. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the STGWA30HP65FB2 provides reliable and efficient operation. STMicroelectronics's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose STGWA30HP65FB2 for your critical power needs.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 50 A
- Current - Collector Pulsed (Icm): 90 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
- Power - Max: 167 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 90 nC
- Td (on/off) @ 25°C: -/71ns
- Test Condition: 400V, 30A, 6.8Ohm, 15V
- Reverse Recovery Time (trr): 140 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247 Long Leads
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