IHW30N110R3FKSA1
Infineon Technologies
Infineon Technologies
IGBT TRENCH 1100V 60A TO247-3
$4.75
Available to order
Reference Price (USD)
1+
$5.27000
10+
$4.76300
240+
$3.96308
720+
$3.42374
1,200+
$2.94019
Exquisite packaging
Discount
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Optimize your power systems with the IHW30N110R3FKSA1 Single IGBT transistor from Infineon Technologies. This Discrete Semiconductor Product is engineered for precision and efficiency, offering superior thermal performance and low EMI characteristics. Ideal for applications like electric vehicle charging stations, renewable energy systems, and industrial automation, the IHW30N110R3FKSA1 delivers consistent and reliable operation. Trust Infineon Technologies's expertise in semiconductor technology to enhance your power management solutions with this high-quality IGBT.
Specifications
- Product Status: Last Time Buy
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 1100 V
- Current - Collector (Ic) (Max): 60 A
- Current - Collector Pulsed (Icm): 90 A
- Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 30A
- Power - Max: 333 W
- Switching Energy: 1.15mJ (off)
- Input Type: Standard
- Gate Charge: 180 nC
- Td (on/off) @ 25°C: -/350ns
- Test Condition: 600V, 30A, 15Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3-1
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