WG50N65DHWQ
WeEn Semiconductors
WeEn Semiconductors
IGBT TRENCH FD ST 650V 91A TO247
$2.31
Available to order
Reference Price (USD)
1+
$2.30907
500+
$2.2859793
1000+
$2.2628886
1500+
$2.2397979
2000+
$2.2167072
2500+
$2.1936165
Exquisite packaging
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The WG50N65DHWQ from WeEn Semiconductors is a high-performance Single IGBT transistor designed for robust and efficient power management in various applications. As part of the Discrete Semiconductor Products category, this IGBT offers low saturation voltage and fast switching capabilities, making it ideal for high-efficiency power conversion. Its advanced design ensures thermal stability and durability, even under demanding conditions. Common applications include motor drives, solar inverters, and industrial power supplies, where reliable and efficient switching is crucial. Choose WG50N65DHWQ for superior performance in your next power electronics project.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 91 A
- Current - Collector Pulsed (Icm): 200 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
- Power - Max: 278 W
- Switching Energy: 1.7mJ (on), 600µJ (off)
- Input Type: Standard
- Gate Charge: 160 nC
- Td (on/off) @ 25°C: 66ns/163ns
- Test Condition: 400V, 50A, 10Ohm, 15V
- Reverse Recovery Time (trr): 105 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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