RBN75H65T1FPQ-A0#CB0
Renesas Electronics America Inc
Renesas Electronics America Inc
ABU / IGBT
$7.02
Available to order
Reference Price (USD)
1+
$7.02000
500+
$6.9498
1000+
$6.8796
1500+
$6.8094
2000+
$6.7392
2500+
$6.669
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power systems with the RBN75H65T1FPQ-A0#CB0 Single IGBT transistor from Renesas Electronics America Inc. This Discrete Semiconductor Product is engineered for precision and efficiency, offering superior thermal performance and low EMI characteristics. Ideal for applications like electric vehicle charging stations, renewable energy systems, and industrial automation, the RBN75H65T1FPQ-A0#CB0 delivers consistent and reliable operation. Trust Renesas Electronics America Inc's expertise in semiconductor technology to enhance your power management solutions with this high-quality IGBT.
Specifications
- Product Status: Active
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 150 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
- Power - Max: 312 W
- Switching Energy: 1.6mJ (on), 1mJ (off)
- Input Type: Standard
- Gate Charge: 54 nC
- Td (on/off) @ 25°C: 29ns/113ns
- Test Condition: 400V, 75A, 16Ohm, 15V
- Reverse Recovery Time (trr): 72 ns
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247A
Related Products
Infineon Technologies
IKN06N60RC2ATMA1
Infineon Technologies
IRG4PC40UPBF
onsemi
FGD4536TM_SN00306
IXYS
IXSH25N120A
IXYS
IXGA12N100
IXYS
IXGR40N60BD1
Infineon Technologies
IKW40N65H5AXKSA1
Fairchild Semiconductor
FGB40N60SM
Infineon Technologies
IRGS4630DTRRPBF
STMicroelectronics