HGTD10N40F1S
Harris Corporation
Harris Corporation
10A, 400V N-CHANNEL IGBT
$0.84
Available to order
Reference Price (USD)
1+
$0.84000
500+
$0.8316
1000+
$0.8232
1500+
$0.8148
2000+
$0.8064
2500+
$0.798
Exquisite packaging
Discount
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The HGTD10N40F1S Single IGBT transistor by Harris Corporation is a high-performance component in the Discrete Semiconductor Products category. Featuring low switching losses and high reliability, it is perfect for demanding applications like medical imaging, defense systems, and data centers. The HGTD10N40F1S ensures precise power control and long-term stability. With Harris Corporation's reputation for excellence, this IGBT is a trusted choice for engineers worldwide. Incorporate HGTD10N40F1S into your projects for superior results.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 400 V
- Current - Collector (Ic) (Max): 12 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 10V, 5A
- Power - Max: 75 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 13.4 nC
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252, (D-Pak)
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