HGTD3N60B3
Harris Corporation
Harris Corporation
7A, 600V, N-CHANNEL IGBT
$0.47
Available to order
Reference Price (USD)
1+
$0.47000
500+
$0.4653
1000+
$0.4606
1500+
$0.4559
2000+
$0.4512
2500+
$0.4465
Exquisite packaging
Discount
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Upgrade your power management systems with the HGTD3N60B3 Single IGBT transistor from Harris Corporation. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the HGTD3N60B3 provides reliable and efficient operation. Harris Corporation's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose HGTD3N60B3 for your critical power needs.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 7 A
- Current - Collector Pulsed (Icm): 20 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 3.5A
- Power - Max: 33.3 W
- Switching Energy: 66µJ (on), 88µJ (off)
- Input Type: Standard
- Gate Charge: 21 nC
- Td (on/off) @ 25°C: 18ns/105ns
- Test Condition: 480V, 3.5A, 82Ohm, 15V
- Reverse Recovery Time (trr): 16 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
- Supplier Device Package: I-PAK
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