MIW50N65F-BP
Micro Commercial Co
Micro Commercial Co
IGBT 650V 40A TO-247
$5.03
Available to order
Reference Price (USD)
1+
$5.03000
500+
$4.9797
1000+
$4.9294
1500+
$4.8791
2000+
$4.8288
2500+
$4.7785
Exquisite packaging
Discount
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Optimize your power systems with the MIW50N65F-BP Single IGBT transistor from Micro Commercial Co. This Discrete Semiconductor Product is engineered for precision and efficiency, offering superior thermal performance and low EMI characteristics. Ideal for applications like electric vehicle charging stations, renewable energy systems, and industrial automation, the MIW50N65F-BP delivers consistent and reliable operation. Trust Micro Commercial Co's expertise in semiconductor technology to enhance your power management solutions with this high-quality IGBT.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 85 A
- Current - Collector Pulsed (Icm): 200 A
- Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 50A
- Power - Max: 326 W
- Switching Energy: 1.27mJ (on), 650µJ (off)
- Input Type: Standard
- Gate Charge: 450 nC
- Td (on/off) @ 25°C: 55ns/319ns
- Test Condition: 300V, 50A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AB
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