STGP30H65DFB2
STMicroelectronics
STMicroelectronics
IGBT 600V 60A 258W TO220AB
$1.39
Available to order
Reference Price (USD)
1+
$1.38600
500+
$1.37214
1000+
$1.35828
1500+
$1.34442
2000+
$1.33056
2500+
$1.3167
Exquisite packaging
Discount
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Enhance your electronic projects with the STGP30H65DFB2 Single IGBT transistor from STMicroelectronics. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the STGP30H65DFB2 ensures precision and reliability. STMicroelectronics's cutting-edge technology guarantees a component that meets the highest industry standards. Choose STGP30H65DFB2 for efficient and durable power solutions.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 50 A
- Current - Collector Pulsed (Icm): 90 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
- Power - Max: 167 W
- Switching Energy: 270µJ (on), 310µJ (off)
- Input Type: Standard
- Gate Charge: 90 nC
- Td (on/off) @ 25°C: 18.4ns/71ns
- Test Condition: 400V, 30A, 6.8Ohm, 15V
- Reverse Recovery Time (trr): 115 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220
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