HGTG32N60E2
Harris Corporation
Harris Corporation
50A, 600V N-CHANNEL IGBT
$7.33
Available to order
Reference Price (USD)
1+
$7.33000
500+
$7.2567
1000+
$7.1834
1500+
$7.1101
2000+
$7.0368
2500+
$6.9635
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The HGTG32N60E2 by Harris Corporation is a high-efficiency Single IGBT transistor, part of the esteemed Discrete Semiconductor Products line. With low on-state voltage and high-speed switching, it is ideal for energy-saving applications. Commonly used in electric vehicles, smart grids, and industrial machinery, the HGTG32N60E2 delivers robust performance. Harris Corporation's commitment to quality ensures a product that meets the rigorous demands of modern electronics. Integrate HGTG32N60E2 into your designs for optimal power control.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 50 A
- Current - Collector Pulsed (Icm): 200 A
- Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 32A
- Power - Max: 208 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 265 nC
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
Related Products
Harris Corporation
IGT6E21
Renesas Electronics America Inc
RJP6065DPN-P1#T2
IXYS
IXYK300N65A3
Renesas Electronics America Inc
CT30VM-8#G01
IXYS
MMIX1G120N120A3V1
Renesas Electronics America Inc
RJP4006AGE-00#P5
IXYS
IXYH30N120C4
IXYS
IXBT14N300HV
IXYS
IXBF55N300
onsemi