RJP6065DPN-P1#T2
Renesas Electronics America Inc
Renesas Electronics America Inc
IGBT
$2.69
Available to order
Reference Price (USD)
1+
$2.69000
500+
$2.6631
1000+
$2.6362
1500+
$2.6093
2000+
$2.5824
2500+
$2.5555
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The RJP6065DPN-P1#T2 Single IGBT transistor by Renesas Electronics America Inc is a high-performance component in the Discrete Semiconductor Products category. Featuring low switching losses and high reliability, it is perfect for demanding applications like medical imaging, defense systems, and data centers. The RJP6065DPN-P1#T2 ensures precise power control and long-term stability. With Renesas Electronics America Inc's reputation for excellence, this IGBT is a trusted choice for engineers worldwide. Incorporate RJP6065DPN-P1#T2 into your projects for superior results.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: -
- Power - Max: -
- Switching Energy: -
- Input Type: -
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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