MMIX1G120N120A3V1
IXYS
IXYS
IGBT 1200V 220A 400W SMPD
$59.04
Available to order
Reference Price (USD)
20+
$49.04550
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power systems with the MMIX1G120N120A3V1 Single IGBT transistor from IXYS. This Discrete Semiconductor Product is engineered for precision and efficiency, offering superior thermal performance and low EMI characteristics. Ideal for applications like electric vehicle charging stations, renewable energy systems, and industrial automation, the MMIX1G120N120A3V1 delivers consistent and reliable operation. Trust IXYS's expertise in semiconductor technology to enhance your power management solutions with this high-quality IGBT.
Specifications
- Product Status: Active
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 220 A
- Current - Collector Pulsed (Icm): 700 A
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A
- Power - Max: 400 W
- Switching Energy: 10mJ (on), 33mJ (off)
- Input Type: Standard
- Gate Charge: 420 nC
- Td (on/off) @ 25°C: 40ns/490ns
- Test Condition: 960V, 100A, 1Ohm, 15V
- Reverse Recovery Time (trr): 700 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 24-PowerSMD, 21 Leads
- Supplier Device Package: 24-SMPD
Related Products
Renesas Electronics America Inc
RJP4006AGE-00#P5
IXYS
IXYH30N120C4
IXYS
IXBT14N300HV
IXYS
IXBF55N300
onsemi
AFGHL40T65RQDN
IXYS
IXYH120N65B3
Harris Corporation
HGTD8P50G1S
Harris Corporation
HGTD7N60B3S
onsemi
FGHL75T65LQDTL4
Infineon Technologies