HGTP14N0FVLR4600
Harris Corporation
Harris Corporation
HGTP14N0FVLR4600
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the HGTP14N0FVLR4600 Single IGBT transistor from Harris Corporation. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the HGTP14N0FVLR4600 ensures precision and reliability. Harris Corporation's cutting-edge technology guarantees a component that meets the highest industry standards. Choose HGTP14N0FVLR4600 for efficient and durable power solutions.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: -
- Power - Max: -
- Switching Energy: -
- Input Type: -
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
Related Products
Infineon Technologies
IGC13T120T8LX1SA1
Infineon Technologies
SIGC28T65EX1SA1
onsemi
PCRU3020W
Motorola
SGB20N35CL
Microsemi Corporation
APT45GR65BSCD10
Infineon Technologies
SKW04N120FKSA1
Infineon Technologies
IRG8CH106K10F
Littelfuse Inc.
LGB18N40ATH
Infineon Technologies
IRG7CH35UEF
Infineon Technologies