HN1B01FU-Y(L,F,T)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS NPN/PNP 50V 0.15A US6
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Discover the HN1B01FU-Y(L,F,T) BJT Array by Toshiba Semiconductor and Storage, a versatile solution for modern electronic designs. This transistor array excels in high-speed switching and linear amplification, featuring matched pairs for consistent performance. Commonly used in audio amplifiers, LED drivers, and power management systems, the HN1B01FU-Y(L,F,T) is a staple in telecommunications and renewable energy applications. With robust construction and ESD protection, it meets stringent industry standards while simplifying PCB layout for compact devices.
Specifications
- Product Status: Active
- Transistor Type: NPN, PNP
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
- Power - Max: 200mW
- Frequency - Transition: 120MHz
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: US6
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