IAUC60N04S6L030HATMA1
Infineon Technologies
Infineon Technologies
IAUC60N04S6L030HATMA1
$1.96
Available to order
Reference Price (USD)
1+
$1.96000
500+
$1.9404
1000+
$1.9208
1500+
$1.9012
2000+
$1.8816
2500+
$1.862
Exquisite packaging
Discount
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Elevate your electronics with the IAUC60N04S6L030HATMA1 from Infineon Technologies, a premier choice in the Discrete Semiconductor Products segment. This Transistors - FETs, MOSFETs - Arrays component is designed for high-efficiency power conversion and management, offering robust performance in various applications. Whether in data centers, automotive systems, or consumer electronics, the IAUC60N04S6L030HATMA1 provides the reliability and efficiency you need. Infineon Technologies's cutting-edge technology guarantees a product that stands the test of time.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tj)
- Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 2V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2128pF @ 25V
- Power - Max: 75W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerVDFN
- Supplier Device Package: PG-TDSON-8-56
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