IAUS300N08S5N012TATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 80V 300A HDSOP-16-2
$7.78
Available to order
Reference Price (USD)
1+
$7.78000
500+
$7.7022
1000+
$7.6244
1500+
$7.5466
2000+
$7.4688
2500+
$7.391
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the IAUS300N08S5N012TATMA1 by Infineon Technologies, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the IAUS300N08S5N012TATMA1 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 300A (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 275µA
- Gate Charge (Qg) (Max) @ Vgs: 231 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 16250 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 375W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HDSOP-16-2
- Package / Case: 16-PowerSOP Module
Related Products
Diodes Incorporated
DMN3110SQ-7
IXYS
IXFP36N60X3
Fairchild Semiconductor
FDMS5361L-F085
Infineon Technologies
BSZ010NE2LS5ATMA1
Panjit International Inc.
PJQ5444-AU_R2_000A1
Fairchild Semiconductor
IRFS730B
Infineon Technologies
IST006N04NM6AUMA1
Vishay Siliconix
SI2304BDS-T1-GE3
Infineon Technologies
IPD80R600P7ATMA1
Renesas Electronics America Inc