IFS100V12PT4BOSA1
Infineon Technologies
Infineon Technologies
IGBT MODULE 1200V 100A
$0.00
Available to order
Reference Price (USD)
6+
$348.25500
Exquisite packaging
Discount
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Experience next-generation power control with Infineon Technologies's IFS100V12PT4BOSA1 IGBT module. As a leader in Discrete Semiconductor Products, this transistor module features state-of-the-art trench gate technology and advanced carrier lifetime control. The IFS100V12PT4BOSA1 offers: symmetrical blocking capability, low switching losses, and excellent cosmic ray robustness. Target applications include electric bus charging infrastructure, industrial plasma generators, and high-power laser drivers. Implement the IFS100V12PT4BOSA1 in your next-generation HVDC systems or particle accelerator power supplies. Infineon Technologies delivers reliability where it matters most with the IFS100V12PT4BOSA1 IGBT module.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 100 A
- Power - Max: -
- Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 100A
- Current - Collector Cutoff (Max): -
- Input Capacitance (Cies) @ Vce: -
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 65°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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