IGLD60R190D1SAUMA1
Infineon Technologies
Infineon Technologies
GAN HV PG-LSON-8
$9.56
Available to order
Reference Price (USD)
1+
$9.55800
500+
$9.46242
1000+
$9.36684
1500+
$9.27126
2000+
$9.17568
2500+
$9.0801
Exquisite packaging
Discount
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Enhance your electronic projects with the IGLD60R190D1SAUMA1 single MOSFET from Infineon Technologies. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Infineon Technologies's IGLD60R190D1SAUMA1 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: 1.6V @ 960µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): -10V
- Input Capacitance (Ciss) (Max) @ Vds: 157 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 62.5W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-LSON-8-1
- Package / Case: 8-LDFN Exposed Pad
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