IGT60R190D1SATMA1
Infineon Technologies
Infineon Technologies
GANFET N-CH 600V 12.5A 8HSOF
$8.31
Available to order
Reference Price (USD)
2,000+
$8.77241
Exquisite packaging
Discount
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Optimize your power electronics with the IGT60R190D1SATMA1 single MOSFET from Infineon Technologies. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the IGT60R190D1SATMA1 combines cutting-edge technology with Infineon Technologies's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 12.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: 1.6V @ 960µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): -10V
- Input Capacitance (Ciss) (Max) @ Vds: 157 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 55.5W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HSOF-8-3
- Package / Case: 8-PowerSFN
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