SQD100N02_3M5L4GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 20V 100A TO252AA
$0.70
Available to order
Reference Price (USD)
1+
$0.69696
500+
$0.6899904
1000+
$0.6830208
1500+
$0.6760512
2000+
$0.6690816
2500+
$0.662112
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The SQD100N02_3M5L4GE3 by Vishay Siliconix is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Vishay Siliconix for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 3.5mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 83W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Vishay Siliconix
SIHFR9220-GE3
Vishay Siliconix
SIHA186N60EF-GE3
Diodes Incorporated
DMTH6012LPSW-13
Toshiba Semiconductor and Storage
TPCP8011,LF
Micro Commercial Co
MCAC88N12A-TP
onsemi
NVMFS021N10MCLT1G
Diodes Incorporated
DMPH6050SFGQ-7
Diodes Incorporated
DMN10H220LQ-7
IXYS
IXTP48N20TM
Taiwan Semiconductor Corporation