IAUZ30N08S5N186ATMA1
Infineon Technologies
Infineon Technologies
MOSFET_(75V 120V( PG-TSDSON-8
$0.48
Available to order
Reference Price (USD)
1+
$0.48380
500+
$0.478962
1000+
$0.474124
1500+
$0.469286
2000+
$0.464448
2500+
$0.45961
Exquisite packaging
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Discover the IAUZ30N08S5N186ATMA1 from Infineon Technologies, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the IAUZ30N08S5N186ATMA1 ensures reliable performance in demanding environments. Upgrade your circuit designs with Infineon Technologies's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 18.6mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 13µA
- Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 759 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 41W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TSDSON-8-32
- Package / Case: 8-PowerTDFN
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