IGW30N100TFKSA1
Infineon Technologies
Infineon Technologies
IGBT 1000V 60A 412W TO247-3
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The IGW30N100TFKSA1 Single IGBT transistor by Infineon Technologies is a high-performance component in the Discrete Semiconductor Products category. Featuring low switching losses and high reliability, it is perfect for demanding applications like medical imaging, defense systems, and data centers. The IGW30N100TFKSA1 ensures precise power control and long-term stability. With Infineon Technologies's reputation for excellence, this IGBT is a trusted choice for engineers worldwide. Incorporate IGW30N100TFKSA1 into your projects for superior results.
Specifications
- Product Status: Obsolete
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1000 V
- Current - Collector (Ic) (Max): 60 A
- Current - Collector Pulsed (Icm): 90 A
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
- Power - Max: 412 W
- Switching Energy: 3.8mJ
- Input Type: Standard
- Gate Charge: 217 nC
- Td (on/off) @ 25°C: 33ns/535ns
- Test Condition: 600V, 30A, 16Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3
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