RJH60D2DPE-00#J3
Renesas Electronics America Inc
Renesas Electronics America Inc
IGBT 600V 25A 63W LDPAK
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Upgrade your power management systems with the RJH60D2DPE-00#J3 Single IGBT transistor from Renesas Electronics America Inc. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the RJH60D2DPE-00#J3 provides reliable and efficient operation. Renesas Electronics America Inc's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose RJH60D2DPE-00#J3 for your critical power needs.
Specifications
- Product Status: Active
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 25 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 12A
- Power - Max: 63 W
- Switching Energy: 100µJ (on), 160µJ (off)
- Input Type: Standard
- Gate Charge: 19 nC
- Td (on/off) @ 25°C: 32ns/85ns
- Test Condition: 300V, 12A, 5Ohm, 15V
- Reverse Recovery Time (trr): 100 ns
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-83
- Supplier Device Package: LDPAK
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