IHW30N100TFKSA1
Infineon Technologies
Infineon Technologies
IGBT 1000V 60A 412W TO247-3
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Experience top-tier performance with the IHW30N100TFKSA1 Single IGBT transistor from Infineon Technologies. As a key player in Discrete Semiconductor Products, this IGBT offers excellent thermal management and high switching frequency. Perfect for applications like server power supplies, LED lighting, and telecommunications, the IHW30N100TFKSA1 ensures energy efficiency and reliability. Trust Infineon Technologies's expertise to deliver a component that enhances your power electronics with superior functionality.
Specifications
- Product Status: Obsolete
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1000 V
- Current - Collector (Ic) (Max): 60 A
- Current - Collector Pulsed (Icm): 90 A
- Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A
- Power - Max: 412 W
- Switching Energy: 1.6mJ (off)
- Input Type: Standard
- Gate Charge: 217 nC
- Td (on/off) @ 25°C: 35ns/546ns
- Test Condition: 600V, 30A, 15Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3-1
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