IXGK120N60B
IXYS
IXYS
IGBT 600V 200A 660W TO264AA
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Discover the IXGK120N60B Single IGBT transistor by IXYS, a standout in the Discrete Semiconductor Products lineup. This component excels in high-voltage and high-current applications, featuring low conduction losses and excellent switching performance. Perfect for use in welding equipment, UPS systems, and induction heating, the IXGK120N60B ensures reliability and efficiency. Its rugged construction and advanced technology make it a top choice for engineers seeking durable and high-performing IGBTs. Upgrade your designs with the IXGK120N60B for unmatched power control.
Specifications
- Product Status: Obsolete
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 200 A
- Current - Collector Pulsed (Icm): 300 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 120A
- Power - Max: 660 W
- Switching Energy: 2.4mJ (on), 5.5mJ (off)
- Input Type: Standard
- Gate Charge: 350 nC
- Td (on/off) @ 25°C: 60ns/200ns
- Test Condition: 480V, 100A, 2.4Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-264-3, TO-264AA
- Supplier Device Package: TO-264 (IXGK)
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