IHW30N120R3FKSA1
Infineon Technologies
Infineon Technologies
IGBT 1200V 60A 349W TO247-3
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Reference Price (USD)
240+
$4.08233
Exquisite packaging
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Discover the IHW30N120R3FKSA1 Single IGBT transistor by Infineon Technologies, a standout in the Discrete Semiconductor Products lineup. This component excels in high-voltage and high-current applications, featuring low conduction losses and excellent switching performance. Perfect for use in welding equipment, UPS systems, and induction heating, the IHW30N120R3FKSA1 ensures reliability and efficiency. Its rugged construction and advanced technology make it a top choice for engineers seeking durable and high-performing IGBTs. Upgrade your designs with the IHW30N120R3FKSA1 for unmatched power control.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 60 A
- Current - Collector Pulsed (Icm): 90 A
- Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 30A
- Power - Max: 349 W
- Switching Energy: 1.47mJ (off)
- Input Type: Standard
- Gate Charge: 263 nC
- Td (on/off) @ 25°C: -/326ns
- Test Condition: 600V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3-1
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