GA35XCP12-247
GeneSiC Semiconductor
GeneSiC Semiconductor
IGBT 1200V SOT247
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Upgrade your power management systems with the GA35XCP12-247 Single IGBT transistor from GeneSiC Semiconductor. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the GA35XCP12-247 provides reliable and efficient operation. GeneSiC Semiconductor's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose GA35XCP12-247 for your critical power needs.
Specifications
- Product Status: Obsolete
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): 35 A
- Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 35A
- Power - Max: -
- Switching Energy: 2.66mJ (on), 4.35mJ (off)
- Input Type: Standard
- Gate Charge: 50 nC
- Td (on/off) @ 25°C: -
- Test Condition: 800V, 35A, 22Ohm, 15V
- Reverse Recovery Time (trr): 36 ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AB
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