GPA025A120MN-ND
SemiQ
SemiQ
IGBT 1200V 50A 312W TO3PN
$0.00
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Reference Price (USD)
2,500+
$1.72900
Exquisite packaging
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The GPA025A120MN-ND from SemiQ is a high-performance Single IGBT transistor designed for robust and efficient power management in various applications. As part of the Discrete Semiconductor Products category, this IGBT offers low saturation voltage and fast switching capabilities, making it ideal for high-efficiency power conversion. Its advanced design ensures thermal stability and durability, even under demanding conditions. Common applications include motor drives, solar inverters, and industrial power supplies, where reliable and efficient switching is crucial. Choose GPA025A120MN-ND for superior performance in your next power electronics project.
Specifications
- Product Status: Obsolete
- IGBT Type: NPT and Trench
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 50 A
- Current - Collector Pulsed (Icm): 75 A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 25A
- Power - Max: 312 W
- Switching Energy: 4.15mJ (on), 870µJ (off)
- Input Type: Standard
- Gate Charge: 350 nC
- Td (on/off) @ 25°C: 57ns/240ns
- Test Condition: 600V, 25A, 10Ohm, 15V
- Reverse Recovery Time (trr): 480 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3PN
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