IKFW90N60EH3XKSA1
Infineon Technologies
Infineon Technologies
INDUSTRY 14
$10.76
Available to order
Reference Price (USD)
240+
$8.36958
Exquisite packaging
Discount
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Enhance your electronic projects with the IKFW90N60EH3XKSA1 Single IGBT transistor from Infineon Technologies. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the IKFW90N60EH3XKSA1 ensures precision and reliability. Infineon Technologies's cutting-edge technology guarantees a component that meets the highest industry standards. Choose IKFW90N60EH3XKSA1 for efficient and durable power solutions.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 77 A
- Current - Collector Pulsed (Icm): 300 A
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
- Power - Max: 178 W
- Switching Energy: 2.65mJ (on), 1.3mJ (off)
- Input Type: Standard
- Gate Charge: 440 nC
- Td (on/off) @ 25°C: 32ns/210ns
- Test Condition: 400V, 75A, 5Ohm, 15V
- Reverse Recovery Time (trr): 107 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3-AI
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